Manufacture of complementary MOS and bipolar integrated circuits

Details Manufacture of complementary MOS and bipolar integrated circuits Manufacture of complementary MOS and bipolar integrated circuits

1999-08-27

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438313, 438322, 438338, H01L 218238

Patent

active

061401706

ABSTRACT:
Complementary vertical bipolar and DMOS devices are formed in a single substrate with fully isolated wells and retrograde well doping. The retrograde well doping results from a process in which the complementary wells are formed in a silicon substrate and heavily doped collector regions formed at the surface. The wafer is then inverted and the backside of the wafer ground away exposing the retrograde doped wells. With appropriate well doping complementary IGBT devices can be integrated with bipolar and/or DMOS devices in the same substrate. Trench technology is used for isolation.

REFERENCES:
patent: 4553318 (1985-11-01), Chandrasekhar
patent: 4956305 (1990-09-01), Arndt
patent: 5001073 (1991-03-01), Huie
patent: 5892264 (1999-04-01), Davis et al.

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