Manufacture method of semiconductor device with gate...

Details Manufacture method of semiconductor device with gate... Manufacture method of semiconductor device with gate...

2005-10-11

2005-10-11

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S981000

Reexamination Certificate

active

06953727

ABSTRACT:
A method of manufacturing a semiconductor device, having the steps of: (a) forming a first gate insulating film having a first thickness in a plurality of regions on a surface of a semiconductor substrate; (b) removing the first gate insulating film in a first region among the plurality of regions and allowing a native oxide film to be formed; (c) heating the semiconductor substrate in a reducing atmosphere and selectively reducing and removing the native oxide film formed in the step (b); and (d) after the step (c), forming a second gate insulating film having a second thickness thinner than the first thickness on the surface of the semiconductor substrate in the first region.

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Notification of the First Office Action dated Jun. 10, 2005.

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