Manufacture method for semiconductor device with patterned...

Details Manufacture method for semiconductor device with patterned... Manufacture method for semiconductor device with patterned...

2006-02-14

2006-02-14

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S511000, C438S520000, C438S722000

Reexamination Certificate

active

06998303

ABSTRACT:
An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

REFERENCES:
patent: 6150221 (2000-11-01), Aoyama
patent: 6573197 (2003-06-01), Callegari et al.
patent: 6579767 (2003-06-01), Park et al.
patent: 6686248 (2004-02-01), Yu
patent: 2001/0023120 (2001-09-01), Tsunashima et al.
patent: 2004/0002223 (2004-01-01), Nallan et al.

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