Manufacture method for semiconductor device having MIM...

Details Manufacture method for semiconductor device having MIM... Manufacture method for semiconductor device having MIM...

2011-08-23

2011-08-23

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C257S303000, C257SE21648

Reexamination Certificate

active

08003462

ABSTRACT:
A first electrode film containing TiAlN and a main dielectric film containing tantalum oxide are formed over a semiconductor substrate. Anneal is performed in the state that the first electrode film and the main dielectric film are formed, to react aluminum (Al) in the first electrode film with oxygen (O) in the main dielectric film and form a subsidiary dielectric film containing aluminum oxide at an interface between the first electrode film and the main dielectric film. A second electrode film is formed facing the first electrode film via the main dielectric film and the subsidiary dielectric film.

REFERENCES:
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 2002-164506 (2002-06-01), None
patent: 2004-039728 (2004-02-01), None

Affiliated with

Also associated with

Rating

Manufacture method for semiconductor device having MIM... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacture method for semiconductor device having MIM..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture method for semiconductor device having MIM... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2643468