Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-12
2008-11-04
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S479000, C438S481000, C257SE21561
Reexamination Certificate
active
07446005
ABSTRACT:
A manufacturable way to recess silicon that employs an end point detection method for the recess etch and allows tight tolerances on the recess is described for fabricating a strained raised source/drain layer. The method includes forming a monolayer oxygen and carbon on a surface of a doped semiconductor substrate; forming an epi Si layer atop the doped semiconductor substrate; forming at least one gate region on the epi Si layer; selectively etching exposed portions of the epi layer, not protected by the gate region, stopping on and exposing the doped semiconductor substrate using end point detection; and forming a strained SiGe layer on the exposed doped semiconductor substrate. The strained SiGe layer severs as a raised layer in which source/drain diffusion regions can be subsequently formed.
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Messenger Brian
Mo Renee T.
Schepis Dominic J.
International Business Machines - Corporation
Li, Esq. Todd M. C.
Nguyen Thanh
Scully , Scott, Murphy & Presser, P.C.
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