Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1995-09-29
1999-04-06
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438775, 438787, H01L 2131
Patent
active
058918094
ABSTRACT:
A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. First, a substrate is oxidized in a chlorinated dry oxidation followed by a low temperature pyrogenic steam oxidation. Next, a low temperature ammonia anneal is performed, followed by a high temperature anneal in an inert ambient.
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Arcot Binny P.
Brigham Lawrence N.
Chau Robert S. K.
Chern Chan-Hong
Jan Chia-Hong
Berry Renee R.
Bowers Charles
Intel Corporation
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