X-ray or gamma ray systems or devices – Specific application – Lithography
Patent
1995-02-17
1996-04-02
Porta, David P.
X-ray or gamma ray systems or devices
Specific application
Lithography
378 35, G21K 500
Patent
active
055047939
ABSTRACT:
In 1-X proximity X-ray lithography involving an X-ray mask having a ring, a rectangular membrane formed in a mask element, and a design pattern defined on the membrane, mechanical devices are provided to produce torque in the ring and, thereby, stretch or shrink the membrane and the design pattern. The mechanical devices are arranged on axes intersecting one another and extending diagonally through the corners of the membrane, as well as on axes which bisect angles formed by the intersection of the corner axes.
REFERENCES:
patent: 4592081 (1986-05-01), Eaton et al.
patent: 4887282 (1989-12-01), Mueller
patent: 4964145 (1990-10-01), Maldonado
patent: 5155749 (1992-10-01), DiMillia et al.
patent: 5308991 (1994-05-01), Kaplan
IBM Technical Disclosure Bulletin, vol. 33, No. 1A, Jun. 1990, Keyser et al., "Correcting Pattern Distortions in Membrane Masks".
IBM Technical Disclosure Bulletin, vol. 33, No. 3A, Aug. 1990, Maldonado et al. "Magnification Correction for X-Ray Mask Substrates".
IBM Technical Disclosure Bulletin, vol. 36, No. 10, Oct. 1993, Guhman et al. "Method for Correcting Elastic Distortions in Membrane Masks".
Loral Federal Systems Company
Porta David P.
Wong Don
LandOfFree
Magnification correction for 1-X proximity X-Ray lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnification correction for 1-X proximity X-Ray lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnification correction for 1-X proximity X-Ray lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2022443