Magnetron plasma processing apparatus and processing method

Details Magnetron plasma processing apparatus and processing method Magnetron plasma processing apparatus and processing method

1994-06-28

1997-08-26

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 71, 118723E, H01L 21302

Patent

active

056606710

ABSTRACT:
A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

REFERENCES:
patent: 4422896 (1983-12-01), Class et al.
patent: 4529476 (1985-07-01), Kawamoto et al.
patent: 4581118 (1986-04-01), Class et al.
patent: 5160398 (1992-11-01), Yanagida
patent: 5272417 (1993-12-01), Ohmi

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