Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Patent
1996-03-13
1999-05-25
Wong, Don
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
20429807, 20429808, 2042982, C23C 1434
Patent
active
059072202
ABSTRACT:
A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.
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Copy of Partial European Search Report dated Jun. 24, 1997.
Gogh James van
Tepman Avi
Applied Materials Inc.
Vu David H.
Wong Don
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