Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-01-25
2005-01-25
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S171000
Reexamination Certificate
active
06847547
ABSTRACT:
A method and system for providing a magnetic element and a corresponding memory are disclosed. In one aspect, the method and system include providing a dual spin tunnel/valve structure and at least one spin valve. The dual spin tunnel/valve structure includes a nonmagnetic spacer layer between a pinned layer and a free layer, another pinned layer and a barrier layer between the free layer and the other pinned layer. The free layers of the dual spin tunnel/valve structure and the spin valve are magnetostatically coupled. In one embodiment a separation layer resides between the dual spin tunnel/valve structure and the spin valve. In another aspect, the method and system include providing two dual spin valves, a spin tunneling junction there between and, in one embodiment, the separation layer. In both aspects, the magnetic element is configured to write to the free layers using spin transfer when a write current is passed through the magnetic element.
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Albert Frank
Huai Yiming
Nguyen Paul P.
Grandis Inc.
Phung Anh
Sawyer Law Group LLP
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