Semiconductor integrated device including an electrostatic...

Details Semiconductor integrated device including an electrostatic... Semiconductor integrated device including an electrostatic...

2005-01-25

2005-01-25

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S354000, C257S355000

Reexamination Certificate

active

06847082

ABSTRACT:
A semiconductor integrated device having a source region and a drain region of a first conductive type, a channel region of a second conductive type which is located between the source and drain regions. The channel region having a highly doped impurity region of the second conductive type which is surrounded by a lightly doped impurity region of the second conductive type.

REFERENCES:
patent: 4928159 (1990-05-01), Mihara et al.
patent: 5545909 (1996-08-01), Williams et al.
patent: 5852315 (1998-12-01), Ker et al.
patent: 6420761 (2002-07-01), Gauthier et al.
patent: 6424013 (2002-07-01), Steinhoff et al.

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