Magnetoresistive solid-state storage device and data storage...

Details Magnetoresistive solid-state storage device and data storage... Magnetoresistive solid-state storage device and data storage...

2006-09-12

2006-09-12

Lamarre, Guy (Department: 2138)

Error detection/correction and fault detection/recovery

Pulse or data error handling

Digital data error correction

C365S158000, C365S230030

Reexamination Certificate

active

07107507

ABSTRACT:
A magnetoresistive solid-state storage device (MRAM device) uses storage cells16arranged in many arrays10to form a macro-array2.For fast access times and to reduce exposure to physical failures, each unit of data (e.g. a sector) is stored with a few sub-units (e.g. bytes) in each of a large plurality of the arrays10.Advantageously, the plurality of arrays10are accessible in parallel substantially simultaneously, and a failure in any one array affects only a small portion of the data unit. Optionally, error correction coding (ECC) is employed to form encoded data with symbols which are stored according to preferred embodiments which further minimise exposure to physical failures.

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