Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-08-16
2009-10-06
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07599215
ABSTRACT:
Disclosed herein are toggle-mode magnetoresistive random access memory (MRAM) devices having small-angle toggle write lines, and related methods of toggle-mode switching MRAM devices. Also disclosed are layouts for MRAM devices constructed according to the disclosed principles. Generally speaking, the disclosed principles provide for non-orthogonally aligned toggle-mode write lines used to switch toggle-mode MRAM devices that employ a bias field to decrease the threshold needed to switch the magnetic state of each device. While the conventional toggle-mode write lines provide for the desired orthogonal orientation of the applied magnetic fields to optimize device switching, the use of a bias field affects this orthogonal orientation. By non-orthogonally aligning the two write lines as disclosed herein, the detrimental affect of the bias field may be compensated for such that the net fields applied to the device for both lines are again substantially orthogonal, as is desired.
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B. N. Engel, J. Akerman, B. Butcher, R. W. Dave, M. Deherrera, M. Durlam, G. Grynkewich, J. Janesky, S. V. Pietambaram, N. D. Rizzo, J. M. Slaughter, K. Smith, J. J. Sun, and S. Tehrani, A 4-Mb Toggle MRAM Based on a Novel Bit and Switching Method, IEEE Transactions on Magnetics, vol. 41., No. 1., Jan. 2005.
Cheng Hsu Chen
Lin Wen-Chin
Tang Denny
Baker & McKenzie LLP
Dinh Son
Nguyen Nam
Taiwan Semiconductor Manufacturing Company , Ltd.
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