Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-06-07
2011-06-07
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S171000, C257S421000
Reexamination Certificate
active
07957184
ABSTRACT:
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.
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Daibou Tadaomi
Kishi Tatsuya
Kitagawa Eiji
Nagase Toshihiko
Yoda Hiroaki
Kabushiki Kaisha Toshiba
Mai Son L
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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