Power semiconductor module for inverter circuit system

Details Power semiconductor module for inverter circuit system Power semiconductor module for inverter circuit system

2011-06-28

2011-06-28

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S706000, C257S717000, C257S720000, C257S796000, C257SE31097

Reexamination Certificate

active

07968925

ABSTRACT:
A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.

REFERENCES:
patent: 2004/0222515 (2004-11-01), Choi et al.
patent: 2005/0040515 (2005-02-01), Inoue et al.
patent: 2007/0096278 (2007-05-01), Nakatsu et al.
patent: 2005-175163 (2005-06-01), None
patent: 2005-237141 (2005-09-01), None
patent: 2006-202899 (2006-08-01), None
patent: 2007-53295 (2007-03-01), None
patent: 2007-299781 (2007-11-01), None
patent: 4039339 (2008-01-01), None

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