Magnetically enhanced plasma reactor system for semiconductor pr

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723, 20429816, 20429837, H01L 2100

Patent

active

052250245

ABSTRACT:
Magnetic confinement of electrons in a plasma reactor is effected using electro-magnetic coils and other magnets which generate respective magnetic fields which are mutually opposed and substantially orthogonal on their common axis to the major plane of a wafer being processed, instead of being aligned and parallel to the major plane as in prior magnetically enhanced plasma reactors. The respective magnetic fields combine to yield a net magnetic field which is nearly parallel to the wafer away from the magnetic axis so that electrons are confined in the usual manner. In addition, a magnetic mirror provides confinement near the magnetic axis. The E.times.B cross product defines a circumferential drift velocity urging electrons about a closed path about the magnetic axis. The magnetic and cross-product forces on plasma electrons have a rotational symmetry which enhances reaction uniformity across the wafer; this contrasts with the prior art in which lateral drift velocity disturbs plasma symmetry and thus reaction uniformity. Furthermore, the disclosed field geometry permits stronger electron confinement which enhances plasma reaction rates.

REFERENCES:
patent: 4526643 (1985-07-01), Okano et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4623417 (1986-11-01), Spencer et al.
patent: 4632719 (1986-12-01), Chow et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4891095 (1990-01-01), Ishida et al.
IBM Technical Disclosure Bulletin vol. 26 No. 2, Jul., 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetically enhanced plasma reactor system for semiconductor pr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetically enhanced plasma reactor system for semiconductor pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetically enhanced plasma reactor system for semiconductor pr will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1687085

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.