Magnetic tunnel junction structures and methods of fabrication

Details Magnetic tunnel junction structures and methods of fabrication Magnetic tunnel junction structures and methods of fabrication

2005-10-04

2005-10-04

Fourson, George (Department: 2823)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257SE21665

Reexamination Certificate

active

06952364

ABSTRACT:
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop characteristics of the resulting MTJ structure. The bottom electrode layer may also combine the functions of both the seeding layer and bottom electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.

REFERENCES:
patent: 5841692 (1998-11-01), Gallagher et al.
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6341053 (2002-01-01), Nakada et al.
patent: 6454956 (2002-09-01), Engelhardt et al.
patent: 6555428 (2003-04-01), Jung
patent: 2002/0048128 (2002-04-01), Kamiguchi et al.
patent: 2002/0075631 (2002-06-01), Singh et al.
patent: 2003/0072109 (2003-04-01), Sharma et al.
patent: 2003/0122174 (2003-07-01), Fukuzumi
Jeong et al., “Fully Integrated 64Kb MRAM with Novel Reference Cell Scheme”, Electron Devices Meeting, 2002. IEDM '02. Digest. International, vol., Iss., 2002, pp.: 551-554.

Affiliated with

Also associated with

Rating

Magnetic tunnel junction structures and methods of fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel junction structures and methods of fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel junction structures and methods of fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3465183