Magnetic tunnel junction device with improved barrier layer

Details Magnetic tunnel junction device with improved barrier layer Magnetic tunnel junction device with improved barrier layer

2006-01-27

2009-12-22

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S765000, C257SE21280, C360S324200, C365S158000

Reexamination Certificate

active

07635654

ABSTRACT:
Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is formed by depositing an oxidizable material (e.g., Al) on the first electrode, naturally oxidizing it, e.g., at about 0.03 to 10 milli-Torr for up to a few thousand seconds at temperatures below about 35° C., then further rapidly (e.g., plasma) oxidizing at a rate much larger than that of the initial natural oxidation. The second electrode of the M-I-M structure is formed on this oxide. More uniform tunneling properties result. A second oxidizable material layer is optionally provided after the initial natural oxidation and before the rapid oxidation step during which it is substantially entirely converted to insulating oxide. A second natural oxidation cycle may be optionally provided before the second layer is rapidly oxidized.

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