Magnetic tunnel junction current sensors

Details Magnetic tunnel junction current sensors Magnetic tunnel junction current sensors

2007-07-03

2007-07-03

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S185200, C365S189090, C365S226000

Reexamination Certificate

active

11262053

ABSTRACT:
An integrated circuit device includes an active circuit component and a current sensor. The active circuit component may be coupled between a first conductive layer and a second conductive layer, and is configured to produce a first current. The current sensor is disposed over the active circuit component. The current sensor may includes a Magnetic Tunnel Junction (“MTJ”) core disposed between the first conductive layer and the second conductive layer. The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.

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patent: 2002/0024333 (2002-02-01), Maiwald

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