Magnetic tunnel junction and memory device including the same

Details Magnetic tunnel junction and memory device including the same Magnetic tunnel junction and memory device including the same

2008-05-27

2008-05-27

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257SE27005, C257SE43004, C257SE21665, C365S032000, C365S033000, C365S050000, C365S055000, C365S066000, C365S074000, C365S080000, C365S097000, C365S130000, C365S131000, C365S171000

Reexamination Certificate

active

10851387

ABSTRACT:
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.

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