Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-27
2008-05-27
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257SE27005, C257SE43004, C257SE21665, C365S032000, C365S033000, C365S050000, C365S055000, C365S066000, C365S074000, C365S080000, C365S097000, C365S130000, C365S131000, C365S171000
Reexamination Certificate
active
07378698
ABSTRACT:
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
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Bae Jun-Soo
Baek In-Gyu
Ha Young-Ki
Kim Hyun-Jo
Lee Jang-eun
Loke Steven
Nguyen Tram H
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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