Magnetic switching device

Details Magnetic switching device Magnetic switching device

2006-08-29

2006-08-29

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S049000, C216S054000

Reexamination Certificate

active

07097777

ABSTRACT:
A method of forming a magnetic switching device is provided. The method includes depositing a bilayer hardmask, which may comprise a first mask layer of titanium nitride with a second mask layer of tungsten formed thereon. A first lithography process is performed to pattern the second mask layer, and a second lithography process is performed to pattern the first mask layer. Thereafter, the magnetic tunnel junction stack may be patterned in accordance with the first mask layer. An etching process may be performed to further pattern the first mask layer in accordance with the second mask layer. An optional passivation layer may be formed over the first mask layer and the second mask layer.

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