Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-08
2008-01-08
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C365S158000
Reexamination Certificate
active
07317219
ABSTRACT:
A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
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Kim Tae-Wan
Lee Jang-eun
Park Sang-Jin
Park Wan-jun
Ho Hoang-Quan
Huynh Andy
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
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