Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-08-15
2006-08-15
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07092283
ABSTRACT:
A magnetic random access memory device may include a first electrode on a substrate, a magnetic tunneling junction element electrically connected to the electrode, and a second electrode electrically connected to the first electrode through the magnetic tunneling junction element. In addition, a heat generating layer may be electrically connected in series between the first and second electrodes, and the heat generating layer may provide a relatively high resistance with respect to electrical current flow. Related methods are also discussed.
REFERENCES:
patent: 6130814 (2000-10-01), Sun
patent: 6163477 (2000-12-01), Tran
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6385083 (2002-05-01), Sharma et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6509621 (2003-01-01), Nakao
patent: 6545906 (2003-04-01), Savtchenko et al.
patent: 6560135 (2003-05-01), Matsuoka et al.
patent: 6603677 (2003-08-01), Redon et al.
patent: 6603678 (2003-08-01), Nickel et al.
patent: 6720597 (2004-04-01), Janesky et al.
patent: 6724674 (2004-04-01), Abraham et al.
patent: 6744651 (2004-06-01), Tang
patent: 6762953 (2004-07-01), Tanizaki et al.
patent: 6771534 (2004-08-01), Stipe
patent: 6791874 (2004-09-01), Tran et al.
patent: 6794696 (2004-09-01), Fukuzumi
patent: 2002/0176277 (2002-11-01), Bessho et al.
patent: 2003/0170976 (2003-09-01), Molla et al.
patent: 2005/0078510 (2005-04-01), Jeong et al.
patent: 2001-084757 (2001-03-01), None
patent: 2001-084758 (2001-03-01), None
patent: 2001-250206 (2001-09-01), None
patent: 2002-319664 (2002-10-01), None
patent: 2004-087519 (2004-03-01), None
patent: 2002-319664 (2005-10-01), None
patent: 1020020046036 (2002-06-01), None
patent: 1020030040027 (2003-05-01), None
patent: 1020040003479 (2004-01-01), None
patent: 1020040026619 (2004-03-01), None
patent: 1020040038420 (2004-05-01), None
patent: WO 2004/049344 (2004-06-01), None
Boeck et al. “Spintronics, a New Nanoelectronics Adventure” thinfilmmfg.com 5 pages (2002) <http://www.thinfilmmfg.com/subscribers/Subscriber02/spin1May02.htm> Accessed online on May 20, 2005.
Deak “Spin Injection in Thermally Assisted Magnetic Random Access Memory” 15 pages <http://www.nve.com/advpdf/49—MMM—spin—injection—TA—MRAM.pdf> Accessed online on Jun. 20, 2005.
Fert et al. “The New Era of Spintronics”Europhysics News34(6) 7 pages (2003) <http://www.europhysicsnews.com/full/24/article9/article9.html> Accessed online on Jun. 20, 2005.
Johnson “Magnetic Spin Locks data into MRAMs”EETimes Online(Jul. 17, 2001) 4 pages <http://www.eetimes.com/story/OEG20010717S0064> Accessed online on Apr. 18, 2005.
Jeong Chang-Wook
Jeong Won-Cheol
Kim Hyeong-Jun
Park Jae-Hyun
Myers Bigel & Sibley & Sajovec
Phan Trong
Samsung Electronics Co,. Ltd.
LandOfFree
Magnetic random access memory devices including heat... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic random access memory devices including heat..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory devices including heat... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3652139