Magnetic random access memory device having high-heat...

Details Magnetic random access memory device having high-heat... Magnetic random access memory device having high-heat...

2005-06-21

2005-06-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S678000

Reexamination Certificate

active

06909130

ABSTRACT:
A recording layer of an MTJ element is constituted by using a high crystal magnetic anisotropic material. A write wiring used to write data into the MTJ element is covered with a magnetic layer, and the write wiring and the magnetic layer are exchange-coupled with each other. A sum of a magnetic volume of the magnetic layer at a part opposed to the recording layer of the MTJ element and that of the recording layer is set smaller than a magnetic volume of the magnetic layer at any other part.

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ISSCC Digest of Technical Papers, vol. 43, pp. 128-129, “TA 7.2 A 10NS Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, Feb. 7-9, 2000.
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U.S. Appl. No. 10/715,545, filed Nov. 19, 2003, Saito et al.

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