Magnetic random access memory device capable of providing a...

Static information storage and retrieval – Read/write circuit – Including signal clamping

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000, C365S171000, C365S173000, C365S210130

Reexamination Certificate

active

06982908

ABSTRACT:
A magnetic random access memory (MRAM) includes a first memory array having a plurality of first memory cells, wherein each one of the plurality of first memory cells is arranged at an intersection of at least one of a plurality of wordlines, at least one of a plurality of bitlines, and at least one of a plurality of digit lines, a second memory array having a plurality of second memory cells, wherein each one of the plurality of second memory cells is arranged at an intersection of at least one of the plurality of wordlines, at least one of a first bitline and a second bitline, and at least one of the plurality of digit lines, a current providing unit for providing a second current to one of the first bitline and the second bitline in response to a reference voltage, and a sense amplifier for comparing a first current flowing through one of the plurality of bitlines with the second current. A constant current flows to a reference data line without adjusting a level of the reference voltage. Therefore, it is possible to efficiently and accurately sense current of a bitline and determine a logic state of a selected memory cell.

REFERENCES:
patent: 5936906 (1999-08-01), Tsen
patent: 6278631 (2001-08-01), Naji
patent: 6418046 (2002-07-01), Naji
patent: 6445612 (2002-09-01), Naji
patent: 6600690 (2003-07-01), Nahas et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6700814 (2004-03-01), Nahas et al.
patent: 6788568 (2004-09-01), Hidaka
patent: 6791890 (2004-09-01), Ooishi
patent: 6799256 (2004-09-01), Van Buskirk et al.
patent: 2001/0053104 (2001-12-01), Tran et al.
patent: 2003/0179602 (2003-09-01), Lee et al.
patent: 2004/0012995 (2004-01-01), Ishikawa
patent: 2004/0076029 (2004-04-01), Jeong

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic random access memory device capable of providing a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory device capable of providing a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory device capable of providing a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3585034

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.