Magnetic random access memory device

Details Magnetic random access memory device Magnetic random access memory device

2007-06-26

2007-06-26

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S187000

Reexamination Certificate

active

10907977

ABSTRACT:
A memory device includes a memory cell having a read margin that exceeds the MR ratio of the memory cell's MR element. The memory cell includes a MR element, a reference transistor, and an amplifying transistor. In some embodiments, the MR element can include a magnetic tunneling junction sandwiched between electrode layers. One of the electrode layers can be connected to an input node, which is also connected to the drain or source node of the reference transistor and the gate node of the amplifying transistor. The drain node of the amplifying transistor is connected to a sense amplifier via a conductive program line. The memory cell uses the current through the MR element to control the gate-source voltage of the amplifying transistor, and senses the state of the memory cell based on the voltage drop (or current loss) across the amplifying transistor.

REFERENCES:
patent: 6466471 (2002-10-01), Bhattacharyya
patent: 6711053 (2004-03-01), Tang
patent: 6778433 (2004-08-01), Tang
patent: 6801450 (2004-10-01), Perner
patent: 6829160 (2004-12-01), Qi et al.
patent: 7079415 (2006-07-01), Frey

Affiliated with

Also associated with

Rating

Magnetic random access memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3806509