Magnetic random access memory and fabricating method thereof

Details Magnetic random access memory and fabricating method thereof Magnetic random access memory and fabricating method thereof

1998-08-31

1999-08-17

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, 365158, G11C 1114

Patent

active

059403195

ABSTRACT:
An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).

REFERENCES:
patent: 5329486 (1994-07-01), Lage
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5768181 (1998-06-01), Zhu et al.

Affiliated with

Also associated with

Rating

Magnetic random access memory and fabricating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory and fabricating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory and fabricating method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-321287