Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-01-04

2005-01-04

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S203000, C365S210130, C365S189090, C365S230070

Reexamination Certificate

active

06839269

ABSTRACT:
TMR elements are arranged at the intersections between word lines and bit lines. One end of each word line is connected to the ground point through a row select switch. One end of each bit line is connected to a bit line bias circuit. In read operation, the bit line bias circuit applies a bias potential to all the bit lines. The selected word line is short-circuited to the ground point. Unselected word lines are set in a floating state.

REFERENCES:
patent: 5282104 (1994-01-01), Coutellier et al.
patent: 5894447 (1999-04-01), Takashima
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6317375 (2001-11-01), Perner
patent: 6317376 (2001-11-01), Tran et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6462979 (2002-10-01), Schlosser et al.
patent: 6490190 (2002-12-01), Ramcke et al.
patent: 6512689 (2003-01-01), Naji et al.
patent: 6614681 (2003-09-01), Hidaka
patent: WO 9914760 (1999-03-01), None
patent: WO 9918578 (1999-04-01), None
patent: WO 0019441 (2000-04-01), None
patent: WO 0042614 (2000-07-01), None
patent: WO 0060600 (2000-10-01), None
R. Scheuerlein, et al., ISSCC 2000/Session 7/TD:Emerging Memory & Device Technologies/Paper TA 7.2, pp. 128-129, 94-95, and 409-410, “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and Fet Switch in Each Cell,” Feb. 8, 2000.
M. Durlam, et al., ISSCC 2000 / Session 7 / TD: Emerging Memory & Device Technologies / Paper TA 7.3, pp. 130-131, 96-97, and 410-411, “Nonvolatile Ram Based on Magnetic Tunnel Junction Elements,” Feb. 8, 2000.
P. K. Naji, et al., ISSCC 2001/Session 7/Technology Directions:Advanced Technologies/7.6, pp. 122-123, 438, 94-95, and 404-405, “A 256kb 3.DV1T1MTJ Nonvolatile Magnetoresistive RAM,” 2001.

Affiliated with

Also associated with

Rating

Magnetic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3398537