Magnetic RAM and array architecture using a two transistor,...

Details Magnetic RAM and array architecture using a two transistor,... Magnetic RAM and array architecture using a two transistor,...

2007-02-06

2007-02-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

10366499

ABSTRACT:
A new magnetic RAM cell device is achieved. The device comprisese, first, a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A reading switch is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.

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