Magnetic memory elements using 360° walls

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C428S692100, C428S690000, C428S900000, C365S129000, C365S158000, C365S173000

Reexamination Certificate

active

06906369

ABSTRACT:
A magnetic-ring structure includes at least two states, and at least one twisted state that includes a 360° domain wall that can exist over a wide range of applied fields.

REFERENCES:
patent: 5541868 (1996-07-01), Prinz
patent: 6391483 (2002-05-01), Zhu et al.
patent: WO 02/13208 (2002-02-01), None
patent: WO 2004/047113 (2004-06-01), None
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“Mesoscopic FCC Co Ring Magnets,” Vaz et al.,J. of Magnetism and Magnetic Materials,vol. 249, n. 1-2 (Aug. 2002).
“Switching Properties of Free-Standing Epitaxial Ring Magnets,” Klaui et al.,J. of Magnetism and Magnetic Materials,vol. 240, n. 1-3 (Feb. 2002).
“Observation of a Bi-Domain State and Nucleation Free Switching in Mesoscopic Ring Magnets,” Rothman et al.,Physical Review Letters,vol. 86, n. 6 (Feb. 5, 2001).
“Fast and Controllable Switching in Narrow Ring Nanomagnets,” Lopez-Diaz et al.,J. of Magnetism and Magnetic Materials,vol. 242-245, pp. 553-558 (Apr. 2002).
“Domain Structure of Circular and Ring Magnets,” Kazakova et al.,J. of Magnetism and Magnetic Materials,vol. 258-59, pp. 348-351 (Mar. 2003).
“Ultrahigh density vertical magnetoresistive random access memory (invited),” Zhu et al.Journal of Applied Physics.May 2000. vol. 87, No. 9.

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