Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-07-24
2008-08-19
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
07414882
ABSTRACT:
Integrated circuit memory devices include a semiconductor substrate and a bit line on the semiconductor substrate. A plurality of memory cells is also provided. Each of these magnetic memory cells includes a magnetic storage element, a magnetic flux focusing layer on the magnetic storage element and an electrically insulating layer extending between the bit line and the magnetic flux focusing layer. This electrically insulating layer may contact an upper surface of the magnetic flux focusing layer and a lower surface of the bit line. The magnetic memory cell further includes a non-ferromagnetic electrically conductive layer extending between the magnetic flux focusing layer and the magnetic storage element. The electrically insulating layer is configured to cause current passing in a first direction (e.g., vertical direction) from the magnetic storage element to the non-ferromagnetic electrically conductive layer during a cell writing operation to spread laterally in the magnetic flux focusing layer (and non-ferromagnetic electrically conductive layer) in a second direction (e.g., lateral direction), which is orthogonal to the first direction. The magnetic flux focusing layer may be formed of a ferromagnetic material, such as NiFe.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6178131 (2001-01-01), Ishikawa et al.
patent: 6606263 (2003-08-01), Tang
patent: 6740947 (2004-05-01), Bhattacharyya et al.
patent: 6791872 (2004-09-01), Bloomquist et al.
patent: 6891212 (2005-05-01), Sharma et al.
patent: 6891746 (2005-05-01), Tran et al.
patent: 6937506 (2005-08-01), Anthony et al.
patent: 7009874 (2006-03-01), Deak
patent: 7075807 (2006-07-01), Leuschner et al.
patent: 7180113 (2007-02-01), Braun
patent: 7211511 (2007-05-01), Horikoshi
patent: 2002/0186582 (2002-12-01), Sharma et al.
patent: 2003/0104636 (2003-06-01), Bloomquist et al.
patent: 2006/0114712 (2006-06-01), Braun
patent: 2002-359355 (2002-12-01), None
patent: 1020040078883 (2004-09-01), None
Notice to File Response/Amendment to the Examination Report, Korean Application No. 10-2005-0025562, May 25, 2006.
Le Vu A
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
LandOfFree
Magnetic memory devices having rotationally offset magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory devices having rotationally offset magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory devices having rotationally offset magnetic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3996940