Magnetic memory device with moving magnetic domain walls

Details Magnetic memory device with moving magnetic domain walls Magnetic memory device with moving magnetic domain walls

2008-05-13

2008-05-13

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including magnetic element

C365S080000, C365S066000, C365S130000, C365S243500, C365S171000

Reexamination Certificate

active

07372757

ABSTRACT:
A magnetic memory device includes a plurality of first metal lines arranged in parallel on a substrate and including a plurality of magnetic domains with variable magnetization directions. A plurality of second metal lines is arranged on the substrate perpendicular to the first metal lines. The plurality of second metal lines each has a tunnel through which the plurality of first metal lines pass. First input units are connected to the plurality of first metal lines and supply a current to drag or move the plurality of magnetic domains. Second input units are connected to the plurality of second metal lines to supply a current for switching the magnetization directions of magnetic domains inside the tunnels. Sensing units are connected to the plurality of second metal lines for sensing an electromotive force caused by magnetic domain walls passing through the tunnels.

REFERENCES:
patent: 2004/0252538 (2004-12-01), Parkin
patent: 2006/0028863 (2006-02-01), Chung et al.
patent: 2006/0120132 (2006-06-01), Parkin

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