Magnetic memory device having yoke layer on write...

Details Magnetic memory device having yoke layer on write... Magnetic memory device having yoke layer on write...

2007-04-03

2007-04-03

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11060301

ABSTRACT:
A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

REFERENCES:
patent: 6510078 (2003-01-01), Schwarzl
patent: 6559511 (2003-05-01), Rizzo
patent: 6661688 (2003-12-01), Bloomquist et al.
patent: 6960815 (2005-11-01), Yoda et al.
patent: 7041603 (2006-05-01), Amano et al.
patent: 7064367 (2006-06-01), Hatate et al.

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