Magnetic memory device and methods thereof

Details Magnetic memory device and methods thereof Magnetic memory device and methods thereof

2007-01-19

2009-06-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S046000, C365S055000, C365S097000, C365S100000

Reexamination Certificate

active

07548449

ABSTRACT:
A magnetic memory device and methods thereof are provided. The example magnetic memory device may include a transistor disposed within a given unit cell region and a magnetic tunneling junction (MTJ) element connected to the transistor, the MTJ element including an MTJ cell and first and second pad layers forming a magnetic field at first and second ends of the MTJ cell, the transistor including a drain connected to the first pad layer in the given unit cell region and a bit line, a source connected to the second pad layer in an adjacent unit cell region, and a gate connected to a word line corresponding to the given unit cell region. A first example method may include writing data into a MTJ element by polarizing a selected memory region connected to a word line, a first magnetic field at a first end of the MTJ element controlled by a first transistor corresponding to the selected memory region and a second magnetic field at a second end of the MTJ element controlled by a second transistor associated with an adjacent MJT element, the adjacent MJT element connected to the same word line as the MJT element. A second example method may include applying a first current to a first portion of a MTJ element on a first path from a word line to the MTJ element and applying a second current to a second portion of the MTJ element on a second path from the word line to the MTJ element, each of the first and second currents lower than a current threshold, the current threshold being a minimum current for initiating a polarization of the MTJ element, and a sum of the first and second currents at least equal to the current threshold.

REFERENCES:
patent: 5734605 (1998-03-01), Zhu et al.
patent: 6621730 (2003-09-01), Lage
patent: 2004/0047196 (2004-03-01), Hidaka
patent: 2005/0073897 (2005-04-01), Miyatake et al.
patent: 2007/0076469 (2007-04-01), Ashida et al.
patent: 2007/0097730 (2007-05-01), Chen et al.
patent: WO 03/052828 (2003-06-01), None
patent: 10-2004-0066420 (2004-07-01), None
Korean Office Action dated Apr. 23, 2007.
European Search Report dated Jun. 18, 2007 for corresponding European Application No. 06121148.8, including Abstract.

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