Magnetic memory device and method

Details Magnetic memory device and method Magnetic memory device and method

2009-02-17

2010-10-26

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07821820

ABSTRACT:
An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

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The First Office Action in CN 2005101297694 dated Mar. 13, 2009, and an English Translation thereof.

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