Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-05-04
2011-10-11
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257SE27005, C257SE21665
Reexamination Certificate
active
08035145
ABSTRACT:
A magnetic memory device is provided. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
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Bae Jun-Soo
Kim Hyun-Jo
Lee Jang-Eun
Nam Kyung-Tae
Oh Se-Chung
Crawford Latanya N
Landau Matthew
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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