Magnetic memory device

Details Magnetic memory device Magnetic memory device

2005-09-06

2005-09-06

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06940747

ABSTRACT:
The present invention provides a magnetic memory device. An embodiment of the present invention includes a magnetic memory cell that is switchable between two states offering electrical resistance which are detectible by a sense current though the magnetic memory cell. The device includes a field effect transistor (FET) arrangement which has a source and a drain. The source and the drain are connected by a connecting element which projects from a portion of the device and which has an electrical conductivity that varies in response to a gate voltage applied to the connecting element. The magnetic memory cell is in electrical communication with the connecting element so that at least a portion of the sense current is in use associated with a corresponding gate voltage and the FET arrangement amplifies at least a portion of the sense current.

REFERENCES:
patent: 6256224 (2001-07-01), Perner et al.
patent: 6473336 (2002-10-01), Nakajima et al.
patent: 6693826 (2004-02-01), Black et al.
patent: 6765821 (2004-07-01), Saito et al.
patent: 6795355 (2004-09-01), Ooishi
patent: 6826079 (2004-11-01), Tran
patent: 6831855 (2004-12-01), Kishi et al.

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