Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-14
2009-06-30
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C257S422000, C438S003000, C438S618000, C438S622000, C365S066000
Reexamination Certificate
active
07554145
ABSTRACT:
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
REFERENCES:
patent: 5856227 (1999-01-01), Yu et al.
patent: 5858838 (1999-01-01), Wang et al.
patent: 5904566 (1999-05-01), Tao et al.
patent: 5925575 (1999-07-01), Tao et al.
patent: 5930644 (1999-07-01), Tsai et al.
patent: 6015757 (2000-01-01), Tsai et al.
patent: 6025273 (2000-02-01), Chen et al.
patent: 6040248 (2000-03-01), Chen et al.
patent: 6093619 (2000-07-01), Huang et al.
patent: 6093711 (2000-07-01), de la Harpe et al.
patent: 6194128 (2001-02-01), Tao et al.
patent: 6211061 (2001-04-01), Chen et al.
patent: 6218244 (2001-04-01), Chan et al.
patent: 6232175 (2001-05-01), Liu et al.
patent: 6721084 (2001-08-01), Tu et al.
patent: 6291312 (2001-09-01), Chan et al.
patent: 6319821 (2001-11-01), Liu et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6331480 (2001-12-01), Tsai et al.
patent: 6342419 (2002-01-01), Tu
patent: 6383943 (2002-05-01), Chen et al.
patent: 6429119 (2002-08-01), Chao et al.
patent: 6444575 (2002-09-01), Yu et al.
patent: 6472335 (2002-10-01), Tsai et al.
patent: 6492245 (2002-12-01), Lue et al.
patent: 6501120 (2002-12-01), Tu et al.
patent: 6528366 (2003-03-01), Tu et al.
patent: 6555442 (2003-04-01), Pai et al.
patent: 6624018 (2003-09-01), Yu et al.
patent: 6638853 (2003-10-01), Sue et al.
patent: 6656847 (2003-12-01), Lin et al.
patent: 6680500 (2004-01-01), Low et al.
patent: 6704220 (2004-03-01), Leuschner
patent: 6713802 (2004-03-01), Lee
patent: 6734526 (2004-05-01), Tu et al.
patent: 6753260 (2004-06-01), Li et al.
patent: 6803291 (2004-10-01), Fu et al.
patent: 6806096 (2004-10-01), Kim et al.
patent: 6815248 (2004-11-01), Leuschner et al.
patent: 6855602 (2005-02-01), Chang et al.
patent: 6881622 (2005-04-01), Yu et al.
patent: 6891742 (2005-05-01), Takano et al.
patent: 7042032 (2006-05-01), Lin et al.
patent: 7067866 (2006-06-01), Shi
patent: 2004/0021188 (2004-02-01), Low et al.
Chao Lan-Lin
Lin Wen-Chin
Liu Yuan-Hung
Tsai Chia-Shiung
Tu Yeur-Luen
Au Bac H
Baker & McKenzie LLP
Picardat Kevin M
Taiwan Semiconductor Manufacturing Co. Ltd.
LandOfFree
Magnetic memory cells and manufacturing methods does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic memory cells and manufacturing methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic memory cells and manufacturing methods will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4131976