Magnetic memory cells and manufacturing methods

Details Magnetic memory cells and manufacturing methods Magnetic memory cells and manufacturing methods

2007-02-06

2007-02-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C365S066000, C438S618000, C438S622000, C438S631000, C438S633000, C438S634000

Reexamination Certificate

active

10906357

ABSTRACT:
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

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