Magnetic memory cell with increased GMR ratio

Details Magnetic memory cell with increased GMR ratio Magnetic memory cell with increased GMR ratio

1997-05-22

1998-06-30

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365173, G11C 1115

Patent

active

057743940

ABSTRACT:
A first layer of non-magnetic material is positioned on a layer of an oxide of a magnetic material (e.g. NiO). First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a second layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. The magnetic memory cell is positioned on the first layer of nonmagnetic material so as to sandwich the first nonmagnetic layer between the oxide and the first magnetic layer of the cell. The first layer of non-magnetic material has a thickness (e.g. approximately 7 .ANG.) which prevents the oxide from pinning the first layer of magnetic material and adapts the first layer of magnetic material to the layer of oxide so as to increase the GMR ratio of the magnetic memory cell.

REFERENCES:
patent: 5343422 (1994-08-01), Kung et al.
patent: 5648885 (1997-07-01), Nishioka et al.
patent: 5703805 (1997-12-01), Tehrani et al.
patent: 5705973 (1998-01-01), Yuan et al.

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