Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-01-31
2006-01-31
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000
Reexamination Certificate
active
06992924
ABSTRACT:
The invention provides methods and apparatus for for determining and providing optimum write bit line current and write word line current in an MRAM. A single reference potential is used to determine the values of the write line current and the bit line current. In determining the optimal values, asteroid curves representing bit line magnetic fields Hxgenerated by write bit line current IBand word line magnetic fields Hygenerated by write word line current Iwfor magnetization are considered, and an asteroid curve ACoutis defined outside the asteroid curves of all memory cells taking manufacture variations and design margins into account. A write bit line current and a write word line current are selected such that the write current obtained by adding the write bit line current or currents and the write word line current, or the write power consumed by the bit line or lines and the write word line is minimized. Furthermore, in order to prevent multi-selection, the write bit line current and the write word line current are selected so that they generate a synthetic magnetic field on the curve between calculated points of the asteroid curve ACout.
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Asano Hideo
Kitamura Kohji
Miyatake Hisatada
Noda Kohki
Sunaga Toshio
Dinh Son T.
Kunzler & Associates
Nguyen Hien
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