Magnetic memory

Details Magnetic memory Magnetic memory

2008-04-10

2010-12-07

Such, Matthew W (Department: 2891)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S421000, C257SE43004

Reexamination Certificate

active

07848136

ABSTRACT:
It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane.

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