Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-10-25
2005-10-25
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C257S295000
Reexamination Certificate
active
06958927
ABSTRACT:
A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.
REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6256223 (2001-07-01), Sun
patent: 6532164 (2003-03-01), Redon et al.
patent: 6639291 (2003-10-01), Sin et al.
patent: 6721149 (2004-04-01), Shi et al.
patent: 6747301 (2004-06-01), Hiner et al.
patent: 2002/0105827 (2002-08-01), Redon et al.
patent: 2003/0007398 (2003-01-01), Daughton et al.
patent: 2003/0059588 (2003-03-01), Hannah et al.
F.J. Albert et al., Spin-polarized current switching of a Co thin film nanmagnet, Applied Physics Letters, vol. 77, No. 23, pp. 3809-3811, Dec. 4, 2004.
L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current, Physical Review B, vol. 54, No. 13, pp. 9353-9358, Oct. 1, 1996.
J. Daughton, Magnetoresistive Random Access Memory (MRAM),Copyright Feb. 4, 2000.
J. Grollier et al., Spin-polarized current induced switching in Co/Cu/Co pillars, Applied Physics Letters, vol. 78, No. 25, pp. 3663, Jun. 4, 2001.
D. J Mapps et al., A Non-Volatile Solid-State Memory using the Magnetic Spin-Dependent-Tunnelling Effect, Datatech, pp. 25-28.
J.C. Slonczewski, Current-driven excitation of magnetic multilayers, Journal of Magnetism and Magnetic Materials 159(1996) L1-L7.
S. Soeya et al., Development of half-metallic ultrathin Fe3)4 films for spin-transport devices, Applied Physics Letters, vol. 80, No. 5, pp. 823-825, Feb. 4, 2002.
J.F. Albert, et al, “Polarized Current Switching of a CO Thin Film Nanomagnet”, American Institute of Physics, vol. 77, No. 23, Dec. 4, 2000, pp. 3809-3811.
J.A. Katine, et al, “Current-Driven Magnetization Reversal and Spin-Wave Excitations in Co/Cu/Co Pillars”, the American Physical Society, vol. 84, No. 14, Apr. 3, 2000, pp. 3149-3151.
E.G. Myers, et al, “Point-Contact Studies of Current-Controlled Domain Switching in Magnetic Multilayers” Journal of Applied Physics, vol. 87, No. 9, May 1, 2000, pp. 5502-5503.
J.C. Slonczewski, “Theory and Application of Exchange-Driven Switching”, IEEE, Apr. 2000, pp. CE-02.
J.C. Slonczweski, “Current-Driven Excitation of Magnetic Multilayers”, Journal of Magnetism and Magnetic Materials, 1996, pp. 1.1-1.7.
J.C. Slonczewski, “Conductance and Exchange Coupling of Two Ferromagnets Separated by a Tunneling Barrier”, The American Physical Society, vol. 39, No. 10, Apr. 1, 1999, pp. 6995-7002.
J.Z. Sun, “Current-Driven Magnetic Switching in Manganite Trilayer Junctions”, Journal of Magnetism and Magnetic Materials, No. 202, 1999, pp. 157-162.
Huai Yiming
Nguyen Paul P.
Dinh Son T.
Grandis Inc.
Sawyer Law Group LLP
LandOfFree
Magnetic element utilizing spin-transfer and half-metals and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetic element utilizing spin-transfer and half-metals and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic element utilizing spin-transfer and half-metals and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3464013