Magnetic cell and magnetic memory

Details Magnetic cell and magnetic memory Magnetic cell and magnetic memory

2006-05-09

2006-05-09

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000

Reexamination Certificate

active

07042758

ABSTRACT:
It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships ofh>t1+t2>3030+L×hwhere h represents the height of the electrically conductive pillar, t1represents the thickness of the current diffusion preventing layer, t2represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.

REFERENCES:
patent: 6847509 (2005-01-01), Yoshikawa et al.
patent: 6914575 (2005-07-01), Rawnick et al.
J. Z. Sun, et al., “Batch-fabricated spin-injection magnetic switches”, Applied Physics Letters, vol. 81, No. 12, Sep. 16, 2002, pp. 2202-2204.

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