Magnet design for a sputtering chamber

Details Magnet design for a sputtering chamber Magnet design for a sputtering chamber

1997-04-23

1999-03-02

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20429803, 20429819, 2042982, C23C 1400

Patent

active

058765743

ABSTRACT:
In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Re-deposition of target material onto the target is particularly a problem during plasma, high pressure sputtering.

REFERENCES:
patent: 4872964 (1989-10-01), Suzuki et al.
patent: 4995958 (1991-02-01), Anderson et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5047130 (1991-09-01), Akao et al.
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5242566 (1993-09-01), Parker
patent: 5248402 (1993-09-01), Ballentine et al.
patent: 5252194 (1993-10-01), Demaray et al.
patent: 5314597 (1994-05-01), Harra
patent: 5320728 (1994-06-01), Tepman

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