Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-11
2011-12-13
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S200000, C257S201000, C257SE21170, C257SE21320, C257SE21267, C257SE21278, C257SE21317
Reexamination Certificate
active
08076727
ABSTRACT:
Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain magnesium are deposited onto a substrate and subsequently processed to form magnesium-doped zinc oxide. The resulting transparent conducing oxide includes properties such as an amorphous or nanocrystalline microstructure. Devices that include transparent conducing oxides formed with these methods have better step coverage over substrate topography and more robust film mechanical properties.
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Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Nhu David
Schwegman Lundberg & Woessner, P.A.
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