LPCVD process for depositing titanium films for semiconductor de

Details LPCVD process for depositing titanium films for semiconductor de LPCVD process for depositing titanium films for semiconductor de

1991-06-18

1992-12-22

Bell, Janyce

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427253, 4272551, 427294, 427422, 427427, 427576, 437245, B05D 306

Patent

active

051733277

ABSTRACT:
The present invention describes a CVD process to deposit a titanium film at a high deposition rate that has excellent uniformity and step coverage while avoiding gas phase nucleation and coating of the reactor chamber walls. The vapor of a heated liquid titanium source enters a modified, plasma enhanced, cold wall reaction chamber and is mixed with H.sub.2 as it reaches a wafer substrate surface. As the gas vapors reach the heated wafer substrate a chemical reaction of TiCl.sub.4 +2H.sub.2 .fwdarw.Ti+4HCl is triggered, thereby depositing a uniform titanium film upon the substrate surface. The deposition rate is further enhanced by the presence of rf plasma above the substrate's surface.

REFERENCES:
patent: 3697343 (1972-10-01), Cuomo et al.
patent: 4794019 (1988-12-01), Miller
patent: 4830891 (1989-05-01), Nishitani et al.
patent: 4849260 (1989-07-01), Kusumoto et al.

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