Low voltage superjunction MOSFET

Details Low voltage superjunction MOSFET Low voltage superjunction MOSFET

2003-12-23

2008-08-12

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S279000

Reexamination Certificate

active

07410851

ABSTRACT:
A power semiconductor switching device such as a power MOSFET that includes breakdown voltage enhancement regions formed by self-alignment.

REFERENCES:
patent: 6096606 (2000-08-01), Merchant
patent: 6380569 (2002-04-01), Chang et al.
patent: 06163906 (1994-06-01), None
patent: 0982965 (1997-03-01), None
patent: WO 00/74141 (2000-12-01), None
European Search Report issued by the European Patent Office in EP Application No. 02748066 on Feb. 28, 2008.

Affiliated with

Also associated with

Rating

Low voltage superjunction MOSFET does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low voltage superjunction MOSFET, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low voltage superjunction MOSFET will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4014567