Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2011-01-18
2011-01-18
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S185080, C365S205000, C365S206000, C365S207000
Reexamination Certificate
active
07872923
ABSTRACT:
A low voltage sensing scheme reduces active power down standby leakage current in a memory device. During memory's active power down state, the leak current may increase because of the use of P and Nsense amplifiers having low threshold voltages (Vth) for low Vcc sensing of data signals. A clamping device or diode is used between a Psense amplifier control line (e.g. ACT) and Vcc and/or between an Nsense amplifier control line (e.g. RNL*) and Vss (ground potential). The clamping diode is not enabled during normal memory operations, but is turned on during active power down mode to reduce leakage current through ACT and/or RNL* nodes. The clamping device connected to the ACT node may reduce the voltage on the ACT line during power down mode, whereas the clamping device connected to the RNL* node may increase the voltage on the RNL* line during power down mode to reduce sense amplifier leakage current through these nodes. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
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Dorsey & Whitney LLP
Luu Pho M
Micro)n Technology, Inc.
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